Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling
Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling
By Sjoerd Op 't Land, Mohamed Ramdani, Richard Perdriau, Yannis Braux, and M'hamed Drissi
INSA Rennes (2013)
Abstract Paper

Sjoerd  Op 't Land

Groupe ESEO

France

Coder Page  

The code reproduces the conclusive graph and the goodness-of-fit conclusions of the paper.
Created
November 16, 2013
Software:
Python 2.7.3
Visits
N.A.
Last update
July 22, 2014
Ranking
9999
Runs
63
Code downloads
N.A.
Abstract
Predicting the immunity of electronic boards to radiated electromagnetic interference requires the computation of the coupling efficiency of an electromagnetic field to PCB traces. In the case of complex PCBs, full-wave electromagnetic solvers are convenient, yet at the expense of simulation time. Therefore, this paper introduces the extension of a modified Taylor-based analytical model to the case of traces terminated at one end by a non-characteristic impedance. This model makes it possible to determine the far-field-to-trace coupling using only a sum of closed-form equations. When applied to a shorted, meandered PCB trace, it was found to be accurate to within 2.2 dB compared with GTEM measurements, which demonstrates its relevance for immunity prediction. Moreover, the full-wave simulation of this case study was validated using the extended model and found to be accurate to within 1.4 dB.
Op 't Land, S., M. Ramdani, R. Perdriau, Y. Braux, and M. Drissi, "Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling", INSA Rennes.
Segment 1 length (mm)
Segment 1 length (mm)
Segment 2 length (mm)
Segment 2 length (mm)
Segment 3 length (mm)
Segment 3 length (mm)
Substrate permittivity (unitless)
Substrate permittivity (unitless)
Septum distance (mm)
Septum distance (mm)
Electrical near-end line delay (ps)
Electrical near-end line delay (ps)
Substrate thickness (μm)
Substrate thickness (μm)
Microstrip filling factor (unitless)
Microstrip filling factor (unitless)
Near-end voltage reflection coefficient (unitless)
Near-end voltage reflection coefficient (unitless)
Waiting time

Please cite the publication as :

Op 't Land, S., M. Ramdani, R. Perdriau, Y. Braux, and M. Drissi, "Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling", INSA Rennes.

Please cite the companion website as :

Op 't Land, S., M. Ramdani, R. Perdriau, Y. Braux, and M. Drissi, "Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling", RunMyCode companion website, http://www.execandshare.org/CompanionSite/Site369

Reset data > >
Preview data > >
Load demo data > >
Variable/Parameters Description, constraint Comments
Segment 1 length (mm)
    Length of the first microstrip segment in mm.
    Segment 2 length (mm)
      Length of the second microscrip segment in mm.
      Segment 3 length (mm)
        Length of the third microscrip segment in mm.
        Substrate permittivity (unitless)
          Real part of the microstrip substrate's permittivity. The microstrip is supposed to be impedance matched to the far-end load.
          Septum distance (mm)
            Distance between the GTEM-cell septum and the PCB ground plane in mm.
            Electrical near-end line delay (ps)
              The electrical delay introduced by the (matched) transmission line between the near end of the illuminated line and the short circuit in picoseconds.
              Substrate thickness (μm)
                Thickness of the substrate in micrometers.
                Microstrip filling factor (unitless)
                  Filling factor of the microstrip line: the fraction of the QTEM field that is in the substrate.The effective relative permittivity is calculated as a weighted average between the substrate and air permittivity, as follows: eps_r,eff = fillingFactor*eps_r + (1-fillingFactor)*1
                  Near-end voltage reflection coefficient (unitless)
                    Voltage reflection coefficient Γ of the load connected to the near-end.
                    Variable/Parameters Description Visualisation
                    Segment 1 length (mm)
                    Segment 2 length (mm)
                    Segment 3 length (mm)
                    Substrate permittivity (unitless) Typical FR4 substrate permittivity.
                    Septum distance (mm) Average septum distance of the Schaeffner (Teseq) GTEM 250.
                    Electrical near-end line delay (ps) The electrical delay of the board, SMA connector and inside the short standard, as estimated in Section VI-A of the paper.
                    Substrate thickness (μm) Thickness of the substrate between layer 1 and 2 in a standard, four-layer Eurocircuits stack-up.
                    Microstrip filling factor (unitless) Filling factor as derived from Agilent ADS LineCalc calculations for our geometry along the 20 GHz bandwidth.
                    Near-end voltage reflection coefficient (unitless) An ideal short circuit.
                    Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling
                    S. Op 't Land (2013)
                    Computing Date Status Actions
                    Coder:

                    Sjoerd Op 't Land also created these companion sites

                    Other Companion Sites on same paper

                    Using a Modified Taylor Cell to Validate Simulation and Measurement of Field-to-Shorted-Trace Coupling

                    Other Companion Sites relative to similar papers

                    A Constrained Random Demodulator for Sub-Nyquist Sampling
                    Abstract
                    This paper presents a significant modification to the Random Demodulator (RD) of Tropp et al. for sub-Nyquist sampling of frequency-sparse signals. The modification, termed constrained random demodulator, involves replacing the random waveform, essential to the operation of the RD, with a constrained random waveform that has limits on its switching rate because fast switching waveforms may be hard to generate cleanly. The result is a relaxation on the hardware requirements with a slight, but manageable, decrease in the recovery guarantees. The paper also establishes the importance of properly choosing the statistics of the constrained random waveform. If the power spectrum of the random waveform matches the distribution on the tones of the input signal (i.e., the distribution is proportional to the power spectrum), then recovery of the input signal tones is improved. The theoretical guarantees provided in the paper are validated through extensive numerical simulations and phase transition plots.
                    Harms, A., "A Constrained Random Demodulator for Sub-Nyquist Sampling", IEEE Transactions on Signal Processing, 61, 707-723.
                    Authors: Harms
                    Bajwa
                    Calderbank
                    Coders: Harms
                    Last update
                    05/18/2013
                    Ranking
                    9999
                    Runs
                    N.A.
                    Visits
                    N.A.
                    logo

                    Didn't find your answer ?

                    captcha refresh

                    Frequently Asked Questions


                    There isn't any question about this code.